CZOCHRALSKI GROWTH AND CHARACTERIZATION OF GASB

被引：73

作者：

SUNDER, WA

BARNS, RL

KOMETANI, TY

PARSEY, JM

LAUDISE, RA

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 78卷 / 01期

关键词：

D O I：

10.1016/0022-0248(86)90494-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：9 / 18

页数：10

共 36 条

[1] ABOUT ROLE OF MINORITY CARRIERS IN IMPURITY CONDUCTION OF GASB [J].

ALIEV, MI ;

SAFARALI.GI ;

ABDINOVA, SG .

PHYSICA STATUS SOLIDI, 1967, 22 (02) :741-&

[2]

ALLRED WP, 1962, COMPOUND SEMICONDUCT, V1, P187

[3]

BROZEL MR, IN PRESS

[4] SIMPLE PRESSURIZED CHAMBERS FOR LIQUID ENCAPSULATED CZOCHRALSKI CRYSTAL-GROWTH [J].

BUEHLER, E .

JOURNAL OF CRYSTAL GROWTH, 1978, 43 (05) :584-588

[5] THE DISTRIBUTION OF SOLUTE IN CRYSTALS GROWN FROM THE MELT .1. THEORETICAL [J].

BURTON, JA ;

PRIM, RC ;

SLICHTER, WP .

JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (11) :1987-1991

[6] THE CZOCHRALSKI GROWTH OF GALLIUM ANTIMONIDE SINGLE-CRYSTALS UNDER REDUCING CONDITIONS [J].

COCKAYNE, B ;

STEWARD, VW ;

BROWN, GT ;

MACEWAN, WR ;

YOUNG, ML ;

COURTNEY, SJ .

JOURNAL OF CRYSTAL GROWTH, 1982, 58 (01) :267-272

[7] THE GROWTH AND PERFECTION OF SINGLE-CRYSTAL INDIUM-PHOSPHIDE PRODUCED BY THE LEC TECHNIQUE [J].

COCKAYNE, B ;

BROWN, GT ;

MACEWAN, WR .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (01) :9-15

[8] INVESTIGATION INTO APPARENT PURITY LIMIT IN GASB [J].

EFFER, D ;

ETTER, PJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (05) :451-&

[9]

HANSEN M, 1958, CONSTITUTION BINARY, P755

[10] GA1-XALXSB AVALANCHE PHOTO-DIODES - RESONANT IMPACT IONIZATION WITH VERY HIGH RATIO OF IONIZATION COEFFICIENTS [J].

HILDEBRAND, O ;

KUEBART, W ;

BENZ, KW ;

PILKUHN, MH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :284-288

← 1 2 3 4 →