ON THE DETERMINATION OF PHOSPHORUS DEPTH PROFILE IN PHOSPHORUS-DOPED SILICON

被引：3

作者：

ALFASSI, ZB ^{[1
]}

YANG, MH ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,INST NUCL SCI,HSINCHU 30043,TAIWAN

来源：

JOURNAL OF RADIOANALYTICAL AND NUCLEAR CHEMISTRY-ARTICLES | 1989年 / 132卷 / 01期

关键词：

D O I：

10.1007/BF02060981

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：99 / 104

页数：6

共 13 条

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