CHARACTERIZATION OF GASB EPITAXIAL LAYERS ON GASB AND GAAS SUBSTRATES BY INFRARED REFLECTIVITY

被引：7

作者：

MEZERREG, A

LLINARES, C

机构：

[1] Centre d'Electronique, associé au C.N.R.S. U.A. 391, Université des Sciences et Technologie du Languedoc, Montpellier

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1992年 / 170卷 / 01期

关键词：

D O I：

10.1002/pssb.2221700115

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Infrared reflectivity measurements on p-GaAs epitaxial layers on n-GaSb substrate and n-GaSb epitaxial layers on semi-insulating (SI) GaAs are made to determine the mobility and density of free carriers in the bulk and the layer simultaneously by fitting a theoretical model to experimental data. The results obtained are generally in good agreement with those given by Hall measurements.

引用

页码：129 / 133

页数：5

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