ALGAAS/GAAS/ALGAAS THIN-FILM FABRY-PEROT MODULATOR ON A GLASS SUBSTRATE BY USING ALIGNABLE EPITAXIAL LIFT-OFF

被引：12

作者：

CALHOUN, KH

JOKERST, NM

机构：

[1] Microelectronics Research Center, School of Electrical Engineering, Georgia Institute of Technology, Atlanta, GA

来源：

OPTICS LETTERS | 1993年 / 18卷 / 11期

关键词：

D O I：

10.1364/OL.18.000882

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We describe the fabrication and operation of a novel surface-normal AlGaAs/GaAs/AlGaAs p-i-n Fabry-Perot optical modulator on glass. The thin-film devices were separated from the GaAs growth substrate and deposited onto a glass substrate by an alignable epitaxial lift-off technique. Optical transmission measurements on these structures show a 3-dB contrast ratio over a 1.7-nm bandwidth with a maximum modulation of 3.3 dB at 878 nm, the largest contrast ratio reported to date to our knowledge for a surface-normal, double-heterostructure Franz-Keldysh modulator.

引用

页码：882 / 884

页数：3

共 14 条

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