ELECTROLUMINESCENCE FROM BIPOLAR RESONANT TUNNELING DIODES

被引：49

作者：

VANHOOF, C ^{[1
]}

GENOE, J ^{[1
]}

MERTENS, R ^{[1
]}

BORGHS, G ^{[1
]}

GOOVAERTS, E ^{[1
]}

机构：

[1] UNIV INSTELLING ANTWERP,DEPT PHYS,B-2610 WILRIJK,BELGIUM

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 01期

关键词：

D O I：

10.1063/1.107380

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The incorporation of an AlAs/GaAs resonant tunneling structure inside a GaAs p-n junction leads to strong quantum-well electroluminescence originating from electron and hole tunneling into the resonant tunneling structure. A large peak-to-valley ratio of 10:1 in the electroluminescence intensity is achieved at the electron resonance at 4.2 K, which decreases but persists (1.45:1) at room temperature. Resonant tunneling of holes is also apparent from the electroluminescence at low temperature.

引用

页码：77 / 79

页数：3

共 18 条

[1] QUANTUM FUNCTIONAL DEVICES - RESONANT-TUNNELING TRANSISTORS, CIRCUITS WITH REDUCED COMPLEXITY, AND MULTIPLE-VALUED LOGIC [J].

CAPASSO, F ;

SEN, S ;

BELTRAM, F ;

LUNARDI, LM ;

VENGURLEKAR, AS ;

SMITH, PR ;

SHAH, NJ ;

MALIK, RJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) :2065-2082

[2] RESONANT TUNNELING OF HOLES IN THE MULTIBAND EFFECTIVE-MASS APPROXIMATION [J].

CHAO, CYP ;

CHUANG, SL .

PHYSICAL REVIEW B, 1991, 43 (09) :7027-7039

[3] ELECTRICAL AND SPECTROSCOPIC STUDIES OF SPACE-CHARGE BUILDUP, ENERGY RELAXATION AND MAGNETICALLY ENHANCED BISTABILITY IN RESONANT-TUNNELING STRUCTURES [J].

EAVES, L ;

LEADBEATER, ML ;

HAYES, DG ;

ALVES, ES ;

SHEARD, FW ;

TOOMBS, GA ;

SIMMONDS, PE ;

SKOLNICK, MS ;

HENINI, M ;

HUGHES, OH .

SOLID-STATE ELECTRONICS, 1989, 32 (12) :1101-1108

[4] OPTICAL SWITCHING IN A RESONANT TUNNELING STRUCTURE [J].

ENGLAND, P ;

GOLUB, JE ;

FLOREZ, LT ;

HARBISON, JP .

APPLIED PHYSICS LETTERS, 1991, 58 (09) :887-889

[5] RESONANT TUNNELING IN MAGNETIC-FIELDS - EVIDENCE FOR SPACE-CHARGE BUILDUP [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

PHYSICAL REVIEW B, 1987, 35 (17) :9387-9390

[6] PROBING THE HOLE DISPERSION-CURVES OF A QUANTUM-WELL USING RESONANT MAGNETOTUNNELING SPECTROSCOPY [J].

HAYDEN, RK ;

MAUDE, DK ;

EAVES, L ;

VALADARES, EC ;

HENINI, M ;

SHEARD, FW ;

HUGHES, OH ;

PORTAL, JC ;

CURY, L .

PHYSICAL REVIEW LETTERS, 1991, 66 (13) :1749-1752

[7] NOVEL USE OF RESONANT TUNNELING STRUCTURES FOR OPTICAL AND IR MODULATORS [J].

MEHDI, I ;

HADDAD, GI ;

MAINS, RK .

SUPERLATTICES AND MICROSTRUCTURES, 1989, 5 (03) :443-449

[8] 3-DIMENSIONAL INTEGRATION OF RESONANT TUNNELING STRUCTURES FOR SIGNAL-PROCESSING AND 3-STATE LOGIC [J].

POTTER, RC ;

LAKHANI, AA ;

BEYEA, D ;

HIER, H ;

HEMPFLING, E ;

FATHIMULLA, A .

APPLIED PHYSICS LETTERS, 1988, 52 (25) :2163-2164

[9] EXCITATION MECHANISMS OF PHOTOLUMINESCENCE IN DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES [J].

SKOLNICK, MS ;

SIMMONDS, PE ;

HAYES, DG ;

HIGGS, AW ;

SMITH, GW ;

PITT, AD ;

WHITEHOUSE, CR ;

HUTCHINSON, HJ ;

WHITE, CRH ;

EAVES, L ;

HENINI, M ;

HUGHES, OH .

PHYSICAL REVIEW B, 1990, 42 (05) :3069-3076

[10] ELECTRONIC PROCESSES IN DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES STUDIED BY PHOTOLUMINESCENCE SPECTROSCOPY IN ZERO AND FINITE MAGNETIC-FIELDS [J].

SKOLNICK, MS ;

HAYES, DG ;

SIMMONDS, PE ;

HIGGS, AW ;

SMITH, GW ;

HUTCHINSON, HJ ;

WHITEHOUSE, CR ;

EAVES, L ;

HENINI, M ;

HUGHES, OH ;

LEADBEATER, ML ;

HALLIDAY, DP .

PHYSICAL REVIEW B, 1990, 41 (15) :10754-10766

← 1 2 →