COMPOSITION MODULATION IN QUANTUM-WIRE STRUCTURES ON VICINAL (110)GAAS STUDIED BY PHOTOLUMINESCENCE

被引：8

作者：

INOUE, K ^{[1
]}

HUANG, HK ^{[1
]}

TAKEUCHI, M ^{[1
]}

KIMURA, K ^{[1
]}

NAKASHIMA, H ^{[1
]}

IWANE, M ^{[1
]}

MATSUDA, O ^{[1
]}

MURASE, K ^{[1
]}

机构：

[1] OSAKA UNIV,FAC SCI,DEPT PHYS,TOYONAKA,OSAKA 560,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 2B期

关键词：

ALGAAS; QUANTUM WIRE; PHOTOLUMINESCENCE; VICINAL SURFACE; STEP BUNCHING; MOLECULAR BEAM EPITAXY;

D O I：

10.1143/JJAP.34.1342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantum wires are fabricated by the growth of the AlGaAs system on vicinal (110) GaAs substrates misoriented toward (111) A. It is concluded that during the growth of AlGaAs, composition modulation occurs on the large-step structure almost independently of the temperature, while the large-step structure is formed by the growth only below a transition temperature. The photoluminescence (PL) from multi-quantum wires.

引用

页码：1342 / 1344

页数：3

共 7 条

[1] STEP STRUCTURES DURING MBE GROWTH OF GAAS AND ALGAAS FILMS ON VICINAL GAAS(110) SURFACES INCLINED TOWARD (111)B [J].