PROPERTIES OF FULLY IMPLANTED AMORPHOUS SIXC1-X - H-ALLOYS

Optical and electrical properties of hydrogenated amorphous silicon carbon films (a-SixC1-x:H), synthesized by ion implantation of carbon and hydrogen ions in silicon, have been determined on different film composition. The optical energy gap ranges from 0.5 to 1.1 eV and electrical resistivity from 10(2) to 10(3) OMEGA cm by changing the silicon concentration (x ranging from 0.25 to 0.85). Moreover the hydrogen content has a dominant effect on changing such properties, and a concentration of 30 at.% increases the optical energy gap by a factor of 2 and the electrical resistivity by several orders of magnitude. Rutherford backscattering and forward recoil of 2.0 MeV helium were used to get the stoichiometry of hydrogenated silicon-carbon films.