NUCLEATION AND GROWTH OF TITANIUM SILICIDE STUDIED BY INSITU ANNEALING IN A TRANSMISSION ELECTRON-MICROSCOPE

被引:27
作者
RAAIJMAKERS, IJMM
READER, AH
VANHOUTUM, HJW
机构
关键词
D O I
10.1063/1.337928
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2527 / 2532
页数:6
相关论文
共 24 条
[1]  
Aumann C. E., 1985, 1985 Proceedings of the Second International IEEE VLSI Multilevel Interconnection Conference (Cat. No.85CH2197-2), P363
[2]   TITANIUM SILICIDE FORMATION - EFFECT OF OXYGEN DISTRIBUTION IN THE METAL-FILM [J].
BERTI, M ;
DRIGO, AV ;
COHEN, C ;
SIEJKA, J ;
BENTINI, GG ;
NIPOTI, R ;
GUERRI, S .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3558-3565
[3]   METASTABLE PHASE FORMATION IN TITANIUM-SILICON THIN-FILMS [J].
BEYERS, R ;
SINCLAIR, R .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5240-5245
[4]  
BEYERS R, 1983, MAT RES SOC S P, V14, P423
[5]   GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J].
BOWER, RW ;
MAYER, JW .
APPLIED PHYSICS LETTERS, 1972, 20 (09) :359-&
[6]   CHEMICAL AND STRUCTURAL ASPECTS OF REACTION AT THE TI SI INTERFACE [J].
BUTZ, R ;
RUBLOFF, GW ;
TAN, TY ;
HO, PS .
PHYSICAL REVIEW B, 1984, 30 (10) :5421-5429
[7]  
Christian J.W., 1981, THEORY TRANSFORMAT 1
[8]   Kinetics of formation of silicides: A review [J].
d'Heurle, F. M. ;
Gas, P. .
JOURNAL OF MATERIALS RESEARCH, 1986, 1 (01) :205-221
[9]  
DUHAY P, 1980, SCI TECHNOL, V2, P29
[10]  
HERD SR, 1983, MATER RES S P, V18, P197