ETCH RESISTANCE OF ELECTRON-BEAM RESISTS IN CHEMICAL DRY ETCHING SYSTEM USING MICROWAVE EXCITATION

被引：6

作者：

JINNO, K ^{[1
]}

机构：

[1] NEC TOSHIBA INFORMAT SYST INC,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 07期

关键词：

D O I：

10.1143/JJAP.17.1283

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1283 / 1284

页数：2

共 8 条

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[4] NEW CHEMICAL DRY ETCHING [J].

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[5]

HORIIKE Y, 1977, SEMICONDUCTOR SILICO, P1071

[6] ETCHING CHARACTERISTICS OF SILICATE GLASS-FILMS IN CF4 PLASMA [J].

JINNO, K ;

KINOSHITA, H ;

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[7]

JINNO K, 1976, DENKI KAGAKU, V44, P206

[8] COMPUTER-CONTROLLED SCANNING ELECTRON-MICROSCOPE SYSTEM FOR HIGH-RESOLUTION MICROELECTRONIC PATTERN FABRICATION [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) :624-+

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