SURFACE-STRUCTURE AND INTERFACE FORMATION OF SI ON GAAS(100)

[11] COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES [J]. SURFACE SCIENCE, 1978, 77 (01) : L162 - L166

[12] STUDY OF THE RECONSTRUCTED GAAS(100) SURFACE [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 5119 - 5121

[13] MICROSCOPIC EFFECTS AT GAAS/GE(100) MOLECULAR-BEAM-EPITAXY INTERFACES - SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY [J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2146 - 2156

[14] LARSEN PK, 1982, PHYS REV B, V26, P3222, DOI 10.1103/PhysRevB.26.3222

[15] GAAS(001)-C (4X4) - A CHEMISORBED STRUCTURE [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4966 - 4977

[16] CORE-LEVEL PHOTOEMISSION-STUDIES OF MBE-GROWN SEMICONDUCTOR SURFACES [J]. PHYSICA B & C, 1983, 117 (MAR): : 819 - 821

[17] HIGH-ENERGY ION CHANNELING STUDY OF MBE-GROWN GAAS(001) SURFACE-STRUCTURES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02): : L98 - L100

[18] THEORETICAL-STUDIES OF RECONSTRUCTED GAAS(100) SURFACES USING 1ST PRINCIPLE CALCULATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 933 - 938

[19] HIGHLY EFFICIENT, LONG LIVED AIGAAS LASERS FABRICATED BY SILICON IMPURITY INDUCED DISORDERING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (03) : 133 - 134

[20] SYMMETRICAL ARSENIC DIMERS ON THE SI(100) SURFACE [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (05) : 520 - 523

[11] COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES [J]. SURFACE SCIENCE, 1978, 77 (01) : L162 - L166

[12] STUDY OF THE RECONSTRUCTED GAAS(100) SURFACE [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 5119 - 5121

[13] MICROSCOPIC EFFECTS AT GAAS/GE(100) MOLECULAR-BEAM-EPITAXY INTERFACES - SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY [J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2146 - 2156

[14] LARSEN PK, 1982, PHYS REV B, V26, P3222, DOI 10.1103/PhysRevB.26.3222

[15] GAAS(001)-C (4X4) - A CHEMISORBED STRUCTURE [J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4966 - 4977

[16] CORE-LEVEL PHOTOEMISSION-STUDIES OF MBE-GROWN SEMICONDUCTOR SURFACES [J]. PHYSICA B & C, 1983, 117 (MAR): : 819 - 821

[17] HIGH-ENERGY ION CHANNELING STUDY OF MBE-GROWN GAAS(001) SURFACE-STRUCTURES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (02): : L98 - L100

[18] THEORETICAL-STUDIES OF RECONSTRUCTED GAAS(100) SURFACES USING 1ST PRINCIPLE CALCULATIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 933 - 938

[19] HIGHLY EFFICIENT, LONG LIVED AIGAAS LASERS FABRICATED BY SILICON IMPURITY INDUCED DISORDERING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (03) : 133 - 134

[20] SYMMETRICAL ARSENIC DIMERS ON THE SI(100) SURFACE [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (05) : 520 - 523