SENSITIVITY OF A MODULATED OPTICAL REFLECTANCE PROBE TO PROCESS-INDUCED LATTICE DISORDER

被引：3

作者：

MURTAGH, M ^{[1
]}

CREAN, GM ^{[1
]}

FLAHERTY, T ^{[1
]}

JEYNES, C ^{[1
]}

机构：

[1] UNIV SURREY, DEPT ELECTR ENGN, GUILDFORD GU2 5XH, SURREY, ENGLAND

来源：

APPLIED SURFACE SCIENCE | 1992年 / 54卷

基金：

英国医学研究理事会;

关键词：

D O I：

10.1016/0169-4332(92)90094-E

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Process induced lattice disorder in Si(100) wafers via a Si-28+ ion beam has been characterised using Rutherford backscattering spectroscopy (RBS) and modulated optical reflectance (MOR). An exact correlation between the measured photoreflectance amplitude response and displaced silicon atom density is obtained. A theoretical calculation of the sensitivity of the technique to lattice disorder is presented.

引用

页码：497 / 501

页数：5

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