AMORPHIZATION OF SILICON BY BOMBARDMENT WITH GROUP-IV IONS

被引：10

作者：

THORNTON, J

HEMMENT, PLF

WILSON, IH

机构：

来源：

关键词：

D O I：

10.1016/S0168-583X(87)80062-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：307 / 311

页数：5

共 12 条

BIERSACK, JP .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :199-206

[2] SHALLOW SOURCE-DRAIN STRUCTURES FOR VLSI CMOS TECHNOLOGY [J].

BUTLER, AL ;

FOSTER, DJ .

PHYSICA B & C, 1985, 129 (1-3) :265-268

[3]

GODFREY DJ, 1984, MRS S P BOSTON, P143

[4]

MOREHEAD FF, 1970, ION IMPLANTATION, P25

NARAYAN, J ;

FATHY, D ;

OEN, OS ;

HOLLAND, OW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (03) :1303-1308

[6]

PICRAUX ST, 1980, MRS S P BOSTON, P135

[7]

RICHMOND ED, 1985, IN PRESS MRS S P BOS

[8]

SADANA DK, 1985, RMS C P OXFORD, P93

[9]

SEIDEL TE, 1985, MRS S P SAN FRANCISC, P7

[10]

SEIDEL TE, 1970, ION IMPLANTATION, P147