CHARACTERIZATION OF SPUTTERED ALN FILMS BY PHOTOELECTRON-SPECTROSCOPY

被引：5

作者：

GRAFE, V

REINHARDT, H

SCHALCH, D

SCHARMANN, A

机构：

[1] Physikalisches Institut, Justus-Liebig-Universität, Giessen

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 136卷 / 02期

关键词：

D O I：

10.1002/pssa.2211360237

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K105 / K108

页数：4

共 11 条

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[3] HYDROGENATION OF REACTIVELY SPUTTERED AINXOY FILMS
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 117 (01): : K23 - K27
[4] DETERMINATION OF REFRACTIVE INDEX OF THIN DIELECTRIC FILMS
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[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1964, 54 (02) : 198 - &
[5] SEMIEMPIRICAL TIGHT-BINDING BAND STRUCTURES OF WURTZITE SEMICONDUCTORS - ALN, CDS, CDSE, ZNS, AND ZNO
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[6] TOTAL VALENCE-BAND DENSITIES OF STATES OF III-V AND II-VI COMPOUNDS FROM X-RAY PHOTOEMISSION SPECTROSCOPY
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[7] FORMATION OF AL-NITRIDE FILMS AT ROOM-TEMPERATURE BY NITROGEN ION-IMPLANTATION INTO ALUMINUM
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HEZEL, R
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5806 - 5810
[8] PHOTOELECTRON AND ELECTRON-ENERGY LOSS SPECTRA OF EPITAXIAL ALUMINUM NITRIDE
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SEXTON, JH
LYNCH, DW
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[J]. SOLID STATE COMMUNICATIONS, 1985, 56 (01) : 35 - 37
[9] TAUC J, 1972, PHYS REV B, V5, P3144
[10] Wagner C., 1979, HDB XRAY PHOTOELECTR

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