ALLOYING CONTACTS TO GALLIUM ARSENIDE BY HOT HYDROGEN AND HCL GASES

Difficulties are often encountered in the fabrication of low resistance contacts on high resistivity GaAs materials. With the usual strip heating technique, it is difficult to obtain samples free of contamination and to obtain temperature uniformity on both sides of the sample. An effective technique for the alloying of contacts on GaAs has been developed by the use of hot hydrogen and reagent grade HCl solutions. Reproducible, ohmic contacts have been made on both low and high resistivity GaAs substrates. Microwave devices have been made with this technique. © 1968.