DECOMPOSITION OF POLYCRYSTALLINE METALLIC FILM RESISTIVITY FROM MATHIESSENS RULE

被引：10

作者：

PICHARD, CR

TELLIER, CR

TOSSER, AJ

机构：

[1] Lab. d'Electroniqué, Univ. de Nancy-I, 54037 Nancy Cedex

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1979年 / 12卷 / 09期

关键词：

D O I：

10.1088/0022-3727/12/9/001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using the framework of the Mayadas-Shatzkes and the effective Fuchs-Sondheimer conduction models an approximate relation for the product of the film resistivity with its TCR is obtained. As a consequence, the film resistivity may be represented by the sum of the bulk resistivity and an additional resistivity which is temperature-independent.

引用

页码：L101 / L103

页数：3

共 11 条

[1]

CHOPRA KL, 1969, THIN FILM PHENOMENA, P345

[2]

Maissel L.I., 1970, HDB THIN FILM TECHNO, P13

[3] ELECTRICAL-RESISTIVITY MODEL FOR POLYCRYSTALLINE FILMS - CASE OF ARBITRARY REFLECTION AT EXTERNAL SURFACES [J].