EFFECT OF TEMPERATURE ON THE VALIDITY OF THE EINSTEIN RELATION IN HEAVILY DOPED SEMICONDUCTORS

被引：36

作者：

GHATAK, KP

CHOWDHURY, AK

GHOSH, S

CHAKRAVARTI, AN

机构：

来源：

APPLIED PHYSICS | 1980年 / 23卷 / 03期

关键词：

D O I：

10.1007/BF00914906

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：241 / 244

页数：4

共 15 条

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