DEVELOPMENT OF A GATE ASSISTED TURN-OFF THYRISTOR FOR USE IN HIGH-FREQUENCY APPLICATIONS

被引:13
作者
RADERECHT, PS [1 ]
机构
[1] WESTINGHOUSE BRAKE & SIGNAL CO LTD, CHIPPENHAM, WILTSHIRE, ENGLAND
关键词
D O I
10.1080/00207217408900420
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:399 / 416
页数:18
相关论文
共 9 条
[1]   PROPERTIES OF GOLD IN SILICON [J].
BULLIS, WM .
SOLID-STATE ELECTRONICS, 1966, 9 (02) :143-&
[2]   FILMS OF SILICON NITRIDE-SILICON DIOXIDE MIXTURES [J].
CHU, TL ;
SZEDON, JR ;
LEE, CH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :318-&
[3]  
CORDINGLEY BV, 1971, J SCI TECHNOL, V38, P2
[4]  
GENTRY FE, 1964, SEMICONDUCTOR CONTRO
[5]  
KERN W, 1970, RCA REV, V31, P207
[6]   A SPREADING RESISTANCE TECHNIQUE FOR RESISTIVITY MEASUREMENTS ON SILICON [J].
MAZUR, RG ;
DICKEY, DH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) :255-&
[9]   GATE TURN-OFF IN P-N-P-N DEVICES [J].
WOLLEY, ED .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (07) :590-&