PREPARATION AND CHARACTERIZATION OF PB(ZRXTI1-X)O3 THIN-FILMS BY REACTIVE SPUTTERING USING AN ALLOY TARGET

被引：13

作者：

HAYASHI, K ^{[1
]}

SHIMIZU, M ^{[1
]}

SHIOSAKI, T ^{[1
]}

机构：

[1] KYOTO UNIV,FAC ENGN,DEPT ELECTR,SAKYO KU,KYOTO 606,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 9B期

关键词：

PZT; THIN FILM; ALLOY TARGET; MAGNETRON SPUTTERING; FERROELECTRIC; PEROVSKITE;

D O I：

10.1143/JJAP.32.4122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pb(Zr(x), Ti1-x)O3 (PZT) thin films were deposited on Pt/SiO2/Si substrates by rf-magnetron sputtering using an alloy target consisting of Zr-Ti alloy and a Pb metal. When an alloy target was used in reactive sputtering, no change was observed in the Zr/Ti ratio of the films for up to 300 h for target uses. The (111)-oriented PZT films were successfully grown at substrate temperatures of 605-620-degrees-C. The coercive fields (E(c)) and remanent polarizations (P(r)) of the films with only the perovskite phase were in the range of 70-72 kV/cm and 20-22 muC/cm2, respectively. In fatigue behavior, switched charge density started to drop at 10(8) cycles.

引用

页码：4122 / 4125

页数：4

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