PREPARATION OF PB(ZR, TI)O3 FILMS ON SI SUBSTRATE BY LASER ABLATION

被引：27

作者：

KIDOH, H ^{[1
]}

OGAWA, T ^{[1
]}

YASHIMA, H ^{[1
]}

MORIMOTO, A ^{[1
]}

SHIMIZU, T ^{[1
]}

机构：

[1] KANAZAWA UNIV,FAC TECHNOL,DEPT ELECTR,KANAZAWA,ISHIKAWA 920,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 9B期

关键词：

LASER ABLATION; PZT; SI SUBSTRATE; NI-ALLOY ELECTRODE; REMANENT POLARIZATION; FILM THICKNESS DEPENDENCE;

D O I：

10.1143/JJAP.31.2965

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lead-zirconate-titanate (PZT) thin films were prepared on oxidized Si(100)-substrate with a thin film electrode by laser ablation. Ferroelectric perovskite phase was obtained in the PZT films on Ni-alloy/SiO2/Si substrate with the substrate temperature above 500-degrees-C, but it was not obtained in the films on Pt/SiO2/Si. The switching voltage of remanent polarization (P(r)) decreased with decreasing PZT film thickness. The 0.15-mum-thick film showed P(r) of 15 muC/cm2 with a swing voltage of 5 V.

引用

页码：2965 / 2967

页数：3

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