PHOTOELECTRONIC PROPERTIES OF LPE GAAS-CU

被引：5

作者：

CHIAO, SS ^{[1
]}

MATTES, BL ^{[1
]}

BUBE, RH ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 01期

关键词：

D O I：

10.1063/1.324377

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：261 / 268

页数：8

共 49 条

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[5] EVIDENCE FOR EXISTENCE OF HIGH CONCENTRATIONS OF LATTICE DEFECTS IN GAAS [J].

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[6]

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[7] DETERMINATION OF CAPTURE CROSS SECTIONS BY OPTICAL QUENCHING OF PHOTOCONDUCTIVITY [J].

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[8]

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[9] THEORY OF SUPERLINEAR PHOTOCONDUCTIVITY IN CDS + RELATED MATERIALS [J].

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[10]

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