AMBIENT-INDUCED DEFECT STATES AT A-SI-H/ITO INTERFACES

被引：6

作者：

HOHEISEL, M

BRUTSCHER, N

WIECZOREK, H

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 115卷 / 1-3期

关键词：

D O I：

10.1016/0022-3093(89)90378-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：114 / 116

页数：3

共 8 条

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[4]

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[5]

MITWALSKY A, 1988, I PHYS C SER 93, V2, P107

[6]

ROSAN K, 1986, MAT RES SOC S P, V70, P683

[7] LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON - A SYSTEMATIC STUDY [J].

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[8] TRANSIENT PHOTOCURRENTS IN A-SI-H DIODES - EFFECTS OF DEEP TRAPPING [J].

WIECZOREK, H ;

FUHS, W .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 109 (01) :245-253

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