SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE - A SIMPLE METHOD OF DETERMINING THE BARRIER HEIGHTS

被引:10
作者
BRUTSCHER, N
HOHEISEL, M
机构
[1] Siemens AG Research Lab, Munich, West Ger, Siemens AG Research Lab, Munich, West Ger
关键词
D O I
10.1016/0038-1101(88)90089-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
18
引用
收藏
页码:87 / 89
页数:3
相关论文
共 18 条
[1]   GENERALIZED NORDE PLOT INCLUDING DETERMINATION OF THE IDEALITY FACTOR [J].
BOHLIN, KE .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :1223-1224
[2]  
BRUTSCHER N, IN PRESS
[3]   EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS [J].
CHEUNG, SK ;
CHEUNG, NW .
APPLIED PHYSICS LETTERS, 1986, 49 (02) :85-87
[4]   FORWARD IV PLOT FOR NONIDEAL SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE [J].
CIBILS, RM ;
BUITRAGO, RH .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :1075-1077
[5]   CHARACTERIZATION OF JUNCTIONS BETWEEN TRANSPARENT ELECTRODES AND A-SI-H [J].
HOHEISEL, M ;
WECZOREK, H ;
KEMPTER, K .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :1413-1416
[6]   SCHOTTKY BARRIERS ON PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON - THE EFFECTS OF TUNNELING [J].
JACKSON, WB ;
NEMANICH, RJ ;
THOMPSON, MJ ;
WACKER, B .
PHYSICAL REVIEW B, 1986, 33 (10) :6936-6945
[7]  
KANICKI J, 1985, MATER RES SOC S P, V49, P101
[8]  
KEMPTER K, 1986, P SPIE, V617, P121
[9]   MINORITY-CARRIER INJECTION INTO SEMICONDUCTORS [J].
MANIFACIER, JC ;
HENISCH, HK .
PHYSICAL REVIEW B, 1978, 17 (06) :2640-2647
[10]   INTERFACE KINETICS AT METAL CONTACTS ON A-SI-H [J].
NEMANICH, RJ ;
THOMPSON, MJ ;
JACKSON, WB ;
TSAI, CC ;
STAFFORD, BL .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :513-516