SHORT-PERIOD GRATINGS FOR LONG-WAVELENGTH OPTICAL-DEVICES

[1] ADESIDA I, 1989, I PHYS C SER, V96, P425

[2] REACTIVE ION ETCHING OF GAAS USING A MIXTURE OF METHANE AND HYDROGEN [J]. ELECTRONICS LETTERS, 1987, 23 (16) : 857 - 859

[3] PASSIVATION OF DONORS IN ELECTRON-BEAM LITHOGRAPHICALLY DEFINED NANOSTRUCTURES AFTER METHANE HYDROGEN REACTIVE ION ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1911 - 1915

[4] Coldren L. A., 1982, IEEE Transactions on Microwave Theory and Techniques, VMTT-30, P1667, DOI 10.1109/TMTT.1982.1131307

[5] FAST DIRECT E-BEAM LITHOGRAPHIC FABRICATION OF 1ST-ORDER GRATINGS FOR 1.3-MU-M DFB LASERS [J]. ELECTRONICS LETTERS, 1988, 24 (02) : 123 - 125

[6] MCINERNEY J, 1986, J LIGHTWAVE TECHNOL, V4, P1495

[7] CHEMICAL ETCHING OF GAAS AND INP BY CHLORINE - THE THERMODYNAMICALLY PREDICTED DEPENDENCE ON CL2 PRESSURE AND TEMPERATURE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (05): : 1216 - 1226

[8] Niggebrugge U., 1985, I PHYS C SER, V79, P367

[9] HIGH-PERFORMANCE INGAASP/INP 1-3MUM LASER STRUCTURES WITH BOTH FACETS ETCHED [J]. ELECTRONICS LETTERS, 1986, 22 (22) : 1157 - 1158

[10] TAROF L, 1987, SPIE, V797, P242

[1] ADESIDA I, 1989, I PHYS C SER, V96, P425

[2] REACTIVE ION ETCHING OF GAAS USING A MIXTURE OF METHANE AND HYDROGEN [J]. ELECTRONICS LETTERS, 1987, 23 (16) : 857 - 859

[3] PASSIVATION OF DONORS IN ELECTRON-BEAM LITHOGRAPHICALLY DEFINED NANOSTRUCTURES AFTER METHANE HYDROGEN REACTIVE ION ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1911 - 1915

[4] Coldren L. A., 1982, IEEE Transactions on Microwave Theory and Techniques, VMTT-30, P1667, DOI 10.1109/TMTT.1982.1131307

[5] FAST DIRECT E-BEAM LITHOGRAPHIC FABRICATION OF 1ST-ORDER GRATINGS FOR 1.3-MU-M DFB LASERS [J]. ELECTRONICS LETTERS, 1988, 24 (02) : 123 - 125

[6] MCINERNEY J, 1986, J LIGHTWAVE TECHNOL, V4, P1495

[7] CHEMICAL ETCHING OF GAAS AND INP BY CHLORINE - THE THERMODYNAMICALLY PREDICTED DEPENDENCE ON CL2 PRESSURE AND TEMPERATURE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (05): : 1216 - 1226

[8] Niggebrugge U., 1985, I PHYS C SER, V79, P367

[9] HIGH-PERFORMANCE INGAASP/INP 1-3MUM LASER STRUCTURES WITH BOTH FACETS ETCHED [J]. ELECTRONICS LETTERS, 1986, 22 (22) : 1157 - 1158

[10] TAROF L, 1987, SPIE, V797, P242