BASIC MECHANISMS IN PLASMA-ETCHING

被引:35
作者
DEUTSCH, H
KERSTEN, H
RUTSCHER, A
机构
关键词
D O I
10.1002/ctpp.2150290304
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
引用
收藏
页码:263 / 284
页数:22
相关论文
共 41 条
[11]   TEMPERATURE-DEPENDENCE OF INP AND GAAS ETCHING IN A CHLORINE PLASMA [J].
DONNELLY, VM ;
FLAMM, DL ;
TU, CW ;
IBBOTSON, DE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) :2533-2537
[12]   ION-BEAM-ASSISTED ETCHING OF DIAMOND [J].
EFREMOW, NN ;
GEIS, MW ;
FLANDERS, DC ;
LINCOLN, GA ;
ECONOMOU, NP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :416-418
[13]   THE REACTION OF FLUORINE-ATOMS WITH SILICON [J].
FLAMM, DL ;
DONNELLY, VM ;
MUCHA, JA .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3633-3639
[14]   CARBON-TETRACHLORIDE PLASMA-ETCHING OF GAAS AND INP - A KINETIC-STUDY UTILIZING NONPERTURBATIVE OPTICAL TECHNIQUES [J].
GOTTSCHO, RA ;
SMOLINSKY, G ;
BURTON, RH .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5908-5919
[15]   SOME ETCH PROPERTIES OF DOPED AND UNDOPED SILICON-OXIDE FILMS FORMED BY ATMOSPHERIC-PRESSURE AND PLASMA-ACTIVATED CHEMICAL VAPOR-DEPOSITION [J].
GUALANDRIS, F ;
PIGNATEL, GU ;
ROJAS, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06) :1604-1608
[16]   PLASMA-PROCESSED POSITIVE AND NEGATIVE RESIST BEHAVIOR OF OBLIQUELY DEPOSITED AMORPHOUS P-SE FILMS [J].
GUPTA, PK ;
KUMAR, A ;
MALHOTRA, LK ;
CHOPRA, KL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (06) :1590-1593
[17]   PLASMALESS DRY ETCHING OF SILICON WITH FLUORINE-CONTAINING COMPOUNDS [J].
IBBOTSON, DE ;
MUCHA, JA ;
FLAMM, DL ;
COOK, JM .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2939-2942
[18]   COMPARISON OF XEF2 AND F-ATOM REACTIONS WITH SI AND SIO2 [J].
IBBOTSON, DE ;
FLAMM, DL ;
MUCHA, JA ;
DONNELLY, VM .
APPLIED PHYSICS LETTERS, 1984, 44 (12) :1129-1131
[19]  
KAY E, 1980, TOP CURR CHEM, V94, P1
[20]  
KONIG HR, 1970, IBM J RES DEV, V14, P168