HOMOGENEOUS NUCLEATION OF DISLOCATIONS IN IN0.4GA0.6AS GAAS NEAR CRITICAL THICKNESS

被引:8
作者
BREEN, KR [1 ]
UPPAL, PN [1 ]
AHEARN, JS [1 ]
机构
[1] MARTIN MARIETTA CORP LABS,BALTIMORE,MD 21227
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期
关键词
D O I
10.1116/1.584987
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:730 / 735
页数:6
相关论文
共 15 条
[1]   CONTROL OF DISLOCATIONS IN GAAS GROWN ON SI(211) BY MOLECULAR-BEAM EPITAXY [J].
AHEARN, JS ;
UPPAL, P ;
LIU, TK ;
KROEMER, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1156-1161
[2]   TRANSMISSION ELECTRON-MICROSCOPY OBSERVATIONS OF MISFIT DISLOCATIONS IN GAASP EPITAXIAL-FILMS [J].
AHEARN, JS ;
LAIRD, C .
JOURNAL OF MATERIALS SCIENCE, 1977, 12 (04) :699-707
[3]   INITIAL-STAGES OF EPITAXIAL-GROWTH OF GAAS ON (100) SILICON [J].
BIEGELSEN, DK ;
PONCE, FA ;
SMITH, AJ ;
TRAMONTANA, JC .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1856-1859
[4]  
BREEN K, IN PRESS
[5]   INTERFACE DISLOCATION-STRUCTURES IN INXGA1-XAS/GAAS MISMATCHED EPITAXY [J].
BREEN, KR ;
UPPAL, PN ;
AHEARN, JS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :758-763
[6]   THE FORMATION MECHANISM OF PLANAR DEFECTS IN COMPOUND SEMICONDUCTORS GROWN EPITAXIALLY ON (100) SILICON SUBSTRATES [J].
ERNST, F ;
PIROUZ, P .
JOURNAL OF MATERIALS RESEARCH, 1989, 4 (04) :834-842
[7]   GROWTH AND CHARACTERIZATION OF ALGAAS/INGAAS/GAAS PSEUDOMORPHIC STRUCTURES [J].
FISCHERCOLBRIE, A ;
MILLER, JN ;
LADERMAN, SS ;
ROSNER, SJ ;
HULL, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :620-624
[8]   THE IDENTIFICATION OF DARK-LINE DEFECTS IN ALGAAS/INGAAS/GAAS HETEROSTRUCTURES [J].
FITZGERALD, EA ;
ASHIZAWA, Y ;
EASTMAN, LF ;
AST, DG .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (10) :4925-4928
[9]   STRUCTURE AND RECOMBINATION IN INGAAS/GAAS HETEROSTRUCTURES [J].
FITZGERALD, EA ;
AST, DG ;
KIRCHNER, PD ;
PETTIT, GD ;
WOODALL, JM .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) :693-703
[10]   DEPENDENCE OF STRUCTURAL AND OPTICAL-PROPERTIES OF IN0.23GA0.77AS GAAS QUANTUM-WELLS ON MISFIT DISLOCATIONS - DIFFERENT CRITICAL THICKNESS FOR DISLOCATION GENERATION AND DEGRADATION OF OPTICAL-PROPERTIES [J].
GRUNDMANN, M ;
LIENERT, U ;
CHRISTEN, J ;
BIMBERG, D ;
FISCHERCOLBRIE, A ;
MILLER, JN .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04) :751-757