共 15 条
[1]
CONTROL OF DISLOCATIONS IN GAAS GROWN ON SI(211) BY MOLECULAR-BEAM EPITAXY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1987, 5 (04)
:1156-1161
[4]
BREEN K, IN PRESS
[5]
INTERFACE DISLOCATION-STRUCTURES IN INXGA1-XAS/GAAS MISMATCHED EPITAXY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1989, 7 (04)
:758-763
[7]
GROWTH AND CHARACTERIZATION OF ALGAAS/INGAAS/GAAS PSEUDOMORPHIC STRUCTURES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1988, 6 (02)
:620-624
[10]
DEPENDENCE OF STRUCTURAL AND OPTICAL-PROPERTIES OF IN0.23GA0.77AS GAAS QUANTUM-WELLS ON MISFIT DISLOCATIONS - DIFFERENT CRITICAL THICKNESS FOR DISLOCATION GENERATION AND DEGRADATION OF OPTICAL-PROPERTIES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1990, 8 (04)
:751-757