DEPENDENCE OF STRUCTURAL AND OPTICAL-PROPERTIES OF IN0.23GA0.77AS GAAS QUANTUM-WELLS ON MISFIT DISLOCATIONS - DIFFERENT CRITICAL THICKNESS FOR DISLOCATION GENERATION AND DEGRADATION OF OPTICAL-PROPERTIES

被引：46

作者：

GRUNDMANN, M ^{[1
]}

LIENERT, U ^{[1
]}

CHRISTEN, J ^{[1
]}

BIMBERG, D ^{[1
]}

FISCHERCOLBRIE, A ^{[1
]}

MILLER, JN ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,PALO ALTO,CA 94304

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.585005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：751 / 757

页数：7

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