KINETICS OF HYDROGEN INTERACTION WITH SIO2-SI INTERFACE-TRAP CENTERS

被引：28

作者：

KHATRI, R ^{[1
]}

ASOKAKUMAR, P ^{[1
]}

NIELSEN, B ^{[1
]}

ROELLIG, LO ^{[1
]}

LYNN, KG ^{[1
]}

机构：

[1] BROOKHAVEN NATL LAB, UPTON, NY 11973 USA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.112361

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of low temperature (less-than-or-equal-to 700-degrees-C) annealing on the thermal dissociation of hydrogen-passivated interface trap centers of a SiO2-Si(100) system is studied using positron annihilation spectroscopy. The Si-H bonds dissociate with an activation energy of 2.60+/-0.06 eV. Assuming that the anneal generates trap centers with a single charge, positron measurements indicate that approximately 4.5x10(8) trap centers/cm2 are created by a 600-degrees-C anneal.

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页码：330 / 332

页数：3

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