POSITRON STUDIES OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES

被引:23
作者
AU, HL [1 ]
ASOKAKUMAR, P [1 ]
NIELSEN, B [1 ]
LYNN, KG [1 ]
机构
[1] UNIV HONG KONG,DEPT PHYS,HONG KONG,HONG KONG
关键词
D O I
10.1063/1.353029
中图分类号
O59 [应用物理学];
学科分类号
摘要
Positron annihilation spectroscopy provides a new probe to study the properties of interface traps in metal-oxide semiconductors (MOS). Using positrons, we have examined the behavior of the interface traps as a function of gate bias. We propose a simple model to explain the positron annihilation spectra from the interface region of a MOS capacitor.
引用
收藏
页码:2972 / 2976
页数:5
相关论文
共 18 条
  • [1] SIO2/SI INTERFACE PROPERTIES USING POSITRONS
    ASOKAKUMAR, P
    LYNN, KG
    LEUNG, TC
    NIELSEN, B
    RUBLOFF, GW
    WEINBERG, ZA
    [J]. PHYSICAL REVIEW B, 1991, 44 (11): : 5885 - 5888
  • [2] STUDY OF HYDROGEN INTERACTION WITH SIO2/SI(100) SYSTEM USING POSITRONS
    ASOKAKUMAR, P
    LYNN, KG
    LEUNG, TC
    NIELSEN, B
    WU, XY
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (09) : 6603 - 6606
  • [3] THE STUDY OF SUB-SURFACE AND INTERFACE CHARACTERISTICS OF SEMICONDUCTOR HETEROSTRUCTURES BY SLOW POSITRON IMPLANTATION SPECTROSCOPY
    BAKER, JA
    COLEMAN, PG
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 : SB39 - SB44
  • [4] OXYGEN IN SILICON - A POSITRON-ANNIHILATION INVESTIGATION
    DANNEFAER, S
    KERR, D
    [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) : 1313 - 1321
  • [5] INTERFACE TRAPS AND PB CENTERS IN OXIDIZED (100) SILICON-WAFERS
    GERARDI, GJ
    POINDEXTER, EH
    CAPLAN, PJ
    JOHNSON, NM
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (06) : 348 - 350
  • [6] Hautojarvi P., 1979, POSITRONS SOLIDS
  • [7] DEPTH PROFILING OF HYDROGEN PASSIVATION OF BORON IN SI(100)
    HUANG, LJ
    LAU, WM
    SIMPSON, PJ
    SCHULTZ, PJ
    [J]. PHYSICAL REVIEW B, 1992, 46 (07): : 4086 - 4091
  • [8] POSITRON-ANNIHILATION AT THE SI/SIO2 INTERFACE
    LEUNG, TC
    WEINBERG, ZA
    ASOKAKUMAR, P
    NIELSEN, B
    RUBLOFF, GW
    LYNN, KG
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) : 530 - 532
  • [9] DEVELOPMENT AND USE OF A THIN-FILM TRANSMISSION POSITRON MODERATOR
    LYNN, KG
    NIELSEN, B
    QUATEMAN, JH
    [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 239 - 240
  • [10] LYNN KG, 1991, INT MATER REV, V36, P1