POSITRON STUDIES OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES

被引：23

作者：

AU, HL ^{[1
]}

ASOKAKUMAR, P ^{[1
]}

NIELSEN, B ^{[1
]}

LYNN, KG ^{[1
]}

机构：

[1] UNIV HONG KONG,DEPT PHYS,HONG KONG,HONG KONG

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 06期

关键词：

D O I：

10.1063/1.353029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Positron annihilation spectroscopy provides a new probe to study the properties of interface traps in metal-oxide semiconductors (MOS). Using positrons, we have examined the behavior of the interface traps as a function of gate bias. We propose a simple model to explain the positron annihilation spectra from the interface region of a MOS capacitor.

引用

收藏

页码：2972 / 2976

页数：5

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