SPACE-CHARGE-LIMITED INSULTED-GATE SURFACE-CHANNEL TRANSISISTOR (SCLIGFET)

被引：3

作者：

WRIGHT, GT

机构：

来源：

ELECTRONICS LETTERS | 1968年 / 4卷 / 21期

关键词：

D O I：

10.1049/el:19680361

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：462 / +

页数：1

共 12 条

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MOLL, JL .

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[6]

REVESZ AG, 1968, RCA REV, V29, P22

[7] EFFECTS OF FIXED BULK CHARGE ON CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].

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PAO, HC .

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[8] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].

SAH, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (07) :324-+

[9]

VANNIELEN JA, 1967, PHILIPS RES REP, V22, P55

[10] THEORY OF THE SPACE-CHARGE-LIMITED SURFACE-CHANNEL DIELECTRIC TRIODE [J].

WRIGHT, GT .

SOLID-STATE ELECTRONICS, 1964, 7 (02) :167-175

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