STRUCTURE-DEPENDENT THRESHOLD CURRENT-DENSITY FOR CDZNSE-BASED II-VI SEMICONDUCTOR-LASERS

被引：25

作者：

WU, YH ^{[1
]}

机构：

[1] NATL UNIV SINGAPORE,DEPT DERMATOL,CTR OPTOELECTR,SINGAPORE 0511,SINGAPORE

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 07期

关键词：

D O I：

10.1109/3.299488

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The optical gain and threshold current density of CdZnSe-based semiconductor lasers are calculated theoretically with strain and quantum confinement effect taken into account. Both diffusion and drift components are incorporated into the calculation of leakage current. Optimized structures are obtained for CdZnSe-based lasers with different structures through minimizing the threshold current density. A minimum current density of about 200 A/cm2 is obtained for a Cd0.2Zn0.8Se/ZnS0.06.94/Zn0.75Mg0.25S0.42Se0.58 modified MQW laser.

引用

页码：1562 / 1573

页数：12

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