RESONANT TUNNELING OF HOLES IN SINGLE AND DOUBLE BARRIER GAAS/ALGAAS STRUCTURES

被引：21

作者：

ROUSSEAU, KV ^{[1
]}

WANG, KL ^{[1
]}

SCHULMAN, JN ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1989年 / 6卷 / 01期

关键词：

D O I：

10.1016/0749-6036(89)90097-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：67 / 72

页数：6

共 14 条

[1]

BLOUNT EI, 1962, SOLID STATE PHYSICS, V13

[2] ON GENERAL THEORY OF SURFACE STATES AND SCATTERING OF ELECTRONS IN SOLIDS [J].

HEINE, V .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (520) :300-&

[3] RESONANT TUNNELING IN SI/SI1-XGEX DOUBLE-BARRIER STRUCTURES [J].

LIU, HC ;

LANDHEER, D ;

BUCHANAN, M ;

HOUGHTON, DC .

APPLIED PHYSICS LETTERS, 1988, 52 (21) :1809-1811

[4] RESONANT TUNNELING OF HOLES IN ALAS-GAAS-ALAS HETEROSTRUCTURES [J].

MENDEZ, EE ;

WANG, WI ;

RICCO, B ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :415-417

[5] COMPLEX BAND-STRUCTURE CALCULATIONS OF THE ELECTRIC-FIELD DEPENDENCE OF THE TRANSMISSION OF HOLES THROUGH A (100) GAAS/ALGAAS/GAAS BARRIER STRUCTURE [J].

MONAGHAN, S ;

BRAND, S .

SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (06) :697-700

[6] RESONANT TUNNELING OF HOLES IN ALAS GAAS TRIPLE BARRIER DIODES [J].

NAKAGAWA, T ;

FUJITA, T ;

MATSUMOTO, Y ;

KOJIMA, T ;

OHTA, K .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :974-976

[7] TRANSMISSION AND REFLECTION COEFFICIENTS OF CARRIERS AT AN ABRUPT GAAS-GAALAS (100) INTERFACE [J].

OSBOURN, GC ;

SMITH, DL .

PHYSICAL REVIEW B, 1979, 19 (04) :2124-2133

[8] RESONANT TUNNELING THROUGH A SI/GEXSI1-X/SI HETEROSTRUCTURE ON A GESI BUFFER LAYER [J].

RHEE, SS ;

PARK, JS ;

KARUNASIRI, RPG ;

YE, Q ;

WANG, KL .

APPLIED PHYSICS LETTERS, 1988, 53 (03) :204-206

[9]

ROUSSEAU KV, 1988, IN PRESS SPIE QUANTU

[10] REDUCED HAMILTONIAN METHOD FOR SOLVING THE TIGHT-BINDING MODEL OF INTERFACES [J].

SCHULMAN, JN ;

CHANG, YC .

PHYSICAL REVIEW B, 1983, 27 (04) :2346-2354

← 1 2 →