RESONANT TUNNELING OF HOLES IN ALAS GAAS TRIPLE BARRIER DIODES

被引：15

作者：

NAKAGAWA, T

FUJITA, T

MATSUMOTO, Y

KOJIMA, T

OHTA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 15期

关键词：

D O I：

10.1063/1.98003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：974 / 976

页数：3

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