HIGHLY RELIABLE, HIGH-C DRAM STORAGE CAPACITORS WITH CVD TA2O5 FILMS ON RUGGED POLYSILICON

被引：30

作者：

LO, GQ

KWONG, DL

FAZAN, PC

MATHEWS, VK

SANDLER, N

机构：

[1] MICRON SEMICOND INC,BOISE,ID 83706

[2] LAM RES CORP,FREMONT,CA 94538

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 05期

关键词：

D O I：

10.1109/55.215172

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on a highly reliable stacked storage capacitor with ultrahigh capacitance using rapid-thermal-annealed LPCVD-Ta2O5 films (approximately 100 angstrom) deposited on NH3-nitrided rugged poly-Si electrodes. The capacitances as high as 20.4 fF/mum2 (corresponding to the thinnest t(ox,eff) of 16.9 angstrom ever reported using LPCVD-Ta2O5 and poly-Si technologies) have been achieved with excellent leakage current and TDDB characteristics. Extensive electrical characterization over wide temperature range (approximately 25-300-degrees-C) shows that the Ta2O5 films on rugged poly-Si electrodes have a better temperature stability in dielectric leakage and breakdown compared to the films on smooth poly-Si electrodes.

引用

页码：216 / 218

页数：3

共 18 条

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