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HIGHLY RELIABLE, HIGH-C DRAM STORAGE CAPACITORS WITH CVD TA2O5 FILMS ON RUGGED POLYSILICON

被引：30
作者：
LO, GQ
KWONG, DL
FAZAN, PC
MATHEWS, VK
SANDLER, N
机构：
[1] MICRON SEMICOND INC,BOISE,ID 83706
[2] LAM RES CORP,FREMONT,CA 94538
来源：
IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 05期
关键词：
D O I：
10.1109/55.215172
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports on a highly reliable stacked storage capacitor with ultrahigh capacitance using rapid-thermal-annealed LPCVD-Ta2O5 films (approximately 100 angstrom) deposited on NH3-nitrided rugged poly-Si electrodes. The capacitances as high as 20.4 fF/mum2 (corresponding to the thinnest t(ox,eff) of 16.9 angstrom ever reported using LPCVD-Ta2O5 and poly-Si technologies) have been achieved with excellent leakage current and TDDB characteristics. Extensive electrical characterization over wide temperature range (approximately 25-300-degrees-C) shows that the Ta2O5 films on rugged poly-Si electrodes have a better temperature stability in dielectric leakage and breakdown compared to the films on smooth poly-Si electrodes.
引用
收藏
页码：216 / 218
页数：3
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