FABRICATION OF MSM PHOTOCONDUCTOR ON POROUS SI USING MICROMACHINED SILICON MASK

被引:28
作者
YU, LZ
WIE, CR
机构
[1] State University of New York at Buffalo, Dept. of Electrical and Computer Engineering, Center for Electronic and Electrooptic Materials, Buffalo, NY 14260, Bonner Hall
关键词
METAL-SEMICONDUCTOR-METAL STRUCTURES; PHOTOCONDUCTING DEVICES; NANOTECHNOLOGY; SILICON;
D O I
10.1049/el:19920578
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An MSM photoconductive detector has been fabricated from porous silicon using a micromachined silicon mask of photolithography. This approach allows damage to porous silicon that can be caused by chemical processing to be avoided. The interdigitated pattern of the silicon mask with a finger spacing of approximately 150-mu-m and finger width of 50-mu-m was made using silicon micromachining, The fabricated MSM porous silicon photoconductive detector, which exhibits responsivities of better than 0.5A/W at the wavelength of the He-Ne laser (6280 angstrom) and a dark current of 950nA at 10V, is very promising as an optoelectronic device.
引用
收藏
页码:911 / 913
页数:3
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