DIFFUSIVITY OF HOLES IN SILICON

被引：26

作者：

NAVA, F ^{[1
]}

CANALI, C ^{[1
]}

REGGIANI, L ^{[1
]}

GASQUET, D ^{[1
]}

VAISSIERE, JC ^{[1
]}

NOUGIER, JP ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,CNRS,CTR ETUD ELECTR SOLIDES,F-34060 MONTPELLIER,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 02期

关键词：

D O I：

10.1063/1.326012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The longitudinal diffusion coefficient of holes in Si has been measured with time-of-flight and noise techniques at 300 K for field strengths ranging from about 0.5 up to 40 kV/cm. As the electric field increases, the diffusion coefficient decreases to about 0.3 of its Ohmic value much more sharply than results previously reported in literature. The experimental results are interpreted by a Monte Carlo simulation which includes warping and nonparabolicity effects of the heavy-hole band.

引用

页码：922 / 924

页数：3

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