DIRECT NICKEL-PLATING ON ALUMINUM SUBSTRATE FOR MICROBUMP FORMATION

被引：18

作者：

HONMA, H ^{[1
]}

WATANABE, H ^{[1
]}

KOBAYASHI, T ^{[1
]}

机构：

[1] KANTO GAKUIN UNIV,GRAD SCH,YOKOHAMA,KANAGAWA 236,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 07期

关键词：

D O I：

10.1149/1.2055006

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Electroless nickel plating on aluminum substrates using a nickel displacement process has been investigated. A zincate process is generally used prior to electroless nickel plating on aluminum substrates. However, the deposited nickel film exhibits higher adhesion strength if a nickel displacement process is used instead of the zincate process. Adhesion strength depends on the displacement reaction rate which can be controlled by selecting the appropriate complexing agent and plating conditions in the displacement bath. In addition, photoresist can be applied for providing a fine conductive circuit, pad, via-hole, or bump with electroless nickel since the high alkaline zincate process is eliminated. Straight-walled bumps approximately 20 mum wide and 15 mum high can be formed by electroless nickel deposition using the nickel displacement process.

引用

页码：1791 / 1795

页数：5

共 8 条

[1] SELECTIVE ELECTROLESS NI-CU(P) DEPOSITION FOR VIA HOLE FILLING AND CONDUCTOR PATTERN CLADDING IN VLSI MULTILEVEL INTERCONNECTION STRUCTURES [J].