EFFECTS OF IONIZING-RADIATION ON SMALL-SIGNAL MICROWAVE BIPOLAR-TRANSISTORS

被引:7
作者
THOMSON, I
机构
关键词
D O I
10.1109/T-ED.1978.19162
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:736 / 741
页数:6
相关论文
共 18 条
[1]   EFFECTS OF HCL GETTERING, CR DOPING AND AL+ IMPLANTATION ON HARDENED SIO21 [J].
AUBUCHON, KG ;
HARARI, E ;
LEONG, DH ;
CHANG, CP .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :167-171
[2]   IONIZATION AND DISPLACEMENT DAMAGE IN SILICON TRANSISTORS [J].
BRUCKER, GJ ;
DENNEHY, WJ ;
HOLMESSI.AG .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) :188-+
[3]  
BULUCEA CD, 1973, IEEE T ELECTRON DEV, VED20, P692, DOI 10.1109/T-ED.1973.17730
[4]  
CHAFFIN RJ, 1973, MICROWAVE SEMICONDUC
[5]   GAMMA AND VACUUM ULTRAVIOLET IRRADIATIONS OF ION-IMPLANTED SIO2 FOR MOS DIELECTRICS [J].
EMMS, CG ;
HOLMESSIEDLE, AG ;
GROOMBRIDGE, I ;
BOSNELL, JR .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (06) :159-166
[6]   SURFACE RECOMBINATION IN SEMICONDUCTORS [J].
FITZGERALD, DJ ;
GROVE, AS .
SURFACE SCIENCE, 1968, 9 (02) :347-+
[7]  
GIBSON MI, UNPUBLISHED
[8]  
HOLMESSIEDLE A, 1977, JUL IEEE NUCL SPAC R
[9]   RADIATION-INDUCED PERTURBATIONS OF ELECTRICAL PROPERTIES OF SILICON-SILICON DIOXIDE INTERFACE [J].
HUGHES, HL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) :195-&
[10]  
KOOI E, 1965, PHILIPS RES REP, V20, P595