IONIZATION AND DISPLACEMENT DAMAGE IN SILICON TRANSISTORS

[1] IRRADIATION AND ANNEALING OF SILICON PLANAR TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (04) : 287 - +

[2] HIGH-ENERGY RADIATION DAMAGE IN SILICON TRANSISTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1965, NS12 (05) : 69 - &

[3] Coppen P. J., 1962, IRE T ELECTRON DEV, V9, P75

[4] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &

[5] DENNEHY WJ, 1966, JUL IEEE C NUCL SPAC

[6] A STUDY OF NEUTRON-INDUCED BASE CURRENT COMPONENT IN SILICON TRANSISTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1965, NS12 (05) : 134 - +

[7] IVERSEN JE, 1962, IRE T ELECTRON DEV, VED9, P473

[8] SAH CT, 1962, IRE T ELECTRON DEV, VED9, P94, DOI DOI 10.1109/T-ED.1962.14895

[9] MEASUREMENTS OF THE RECOMBINATION VELOCITY AT GERMANIUM SURFACES [J]. PHYSICA, 1954, 20 (11): : 1041 - 1046

[10] ELECTRON BOMBARDMENT OF MOS CAPACITORS - (0.1 TO 1.0 MEV - SI-SIO2 - INDUCED POSITIVE CHARGE - E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (06) : 140 - +

[1] IRRADIATION AND ANNEALING OF SILICON PLANAR TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (04) : 287 - +

[2] HIGH-ENERGY RADIATION DAMAGE IN SILICON TRANSISTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1965, NS12 (05) : 69 - &

[3] Coppen P. J., 1962, IRE T ELECTRON DEV, V9, P75

[4] DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J]. PHYSICAL REVIEW, 1961, 121 (04): : 1015 - &

[5] DENNEHY WJ, 1966, JUL IEEE C NUCL SPAC

[6] A STUDY OF NEUTRON-INDUCED BASE CURRENT COMPONENT IN SILICON TRANSISTORS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1965, NS12 (05) : 134 - +

[7] IVERSEN JE, 1962, IRE T ELECTRON DEV, VED9, P473

[8] SAH CT, 1962, IRE T ELECTRON DEV, VED9, P94, DOI DOI 10.1109/T-ED.1962.14895

[9] MEASUREMENTS OF THE RECOMBINATION VELOCITY AT GERMANIUM SURFACES [J]. PHYSICA, 1954, 20 (11): : 1041 - 1046

[10] ELECTRON BOMBARDMENT OF MOS CAPACITORS - (0.1 TO 1.0 MEV - SI-SIO2 - INDUCED POSITIVE CHARGE - E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (06) : 140 - +