DSA-TYPE NONVOLATILE MEMORY TRANSISTOR WITH SELF-ALIGNED GATES

[1] Barnes J., 1976, International Electron Devices Meeting. (Technical digest), P173

[2] EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) : 157 - +

[3] ANALYSIS AND EXPERIMENTATION ON FIMOS (N-CHANNEL FAMOS) DEVICES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 211 - 214

[4] CARRIER MOBILITY AND CURRENT SATURATION IN MOS TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) : 129 - +

[5] ELECTRICALLY ALTERABLE AVALANCHE-INJECTION-TYPE MOS READ-ONLY MEMORY WITH STACKED-GATE STRUCTURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) : 379 - 387

[6] Kikuchi M., 1975, 1st European Solid State Circuits ConferenceESSCIRC (Extended abstracts only), P66

[7] ELECTRICALLY ERASABLE AND REPROGRAMMABLE READ-ONLY MEMORY USING N-CHANNEL SIMOS ONE-TRANSISTOR CELL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (05) : 606 - 610

[8] SALSBURY PJ, ISSCC77 DIG TECH PAP, P15

[9] TARUI Y, 1971, J JAPAN SOC APPL PHY, V40, P193

[10] TARUI Y, 1972, J JAPAN SOC APPL P S, V41, P173

[1] Barnes J., 1976, International Electron Devices Meeting. (Technical digest), P173

[2] EFFECT OF SURFACE FIELDS ON BREAKDOWN VOLTAGE OF PLANAR SILICON P-N JUNCTIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (03) : 157 - +

[3] ANALYSIS AND EXPERIMENTATION ON FIMOS (N-CHANNEL FAMOS) DEVICES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 211 - 214

[4] CARRIER MOBILITY AND CURRENT SATURATION IN MOS TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) : 129 - +

[5] ELECTRICALLY ALTERABLE AVALANCHE-INJECTION-TYPE MOS READ-ONLY MEMORY WITH STACKED-GATE STRUCTURE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) : 379 - 387

[6] Kikuchi M., 1975, 1st European Solid State Circuits ConferenceESSCIRC (Extended abstracts only), P66

[7] ELECTRICALLY ERASABLE AND REPROGRAMMABLE READ-ONLY MEMORY USING N-CHANNEL SIMOS ONE-TRANSISTOR CELL [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (05) : 606 - 610

[8] SALSBURY PJ, ISSCC77 DIG TECH PAP, P15

[9] TARUI Y, 1971, J JAPAN SOC APPL PHY, V40, P193

[10] TARUI Y, 1972, J JAPAN SOC APPL P S, V41, P173