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ELECTRICAL CHARACTERIZATION AND MODELING OF WIDE-BAND-GAP POROUS SILICON P-N DIODES

被引：15
作者：
CHEN, ZL
LEE, TY
BOSMAN, G
机构：
[1] Department of Electrical Engineering, University of Florida, Gainesville
来源：
JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 04期
关键词：
D O I：
10.1063/1.357609
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The current through porous silicon p-n junctions is measured as a function of bias voltage and temperature. The ideality factor m = 4 value observed under forward bias indicates that channels are present at the unpassivated porous silicon junction surfaces. The generation-recombination current stemming from the space-charge regions between the surface channels and the bulk silicon regions dominates the measured diode current. From the thermal activation energy of the diode saturation current a value of 2.2 eV is calculated for the band gap of porous silicon, which is in good agreement with the value of 2.0 eV found from the photo- and electroluminescence spectra emitted by these diodes.
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页码：2499 / 2504
页数：6
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