PREPARATION AND CHARACTERIZATION OF HIGH-QUALITY INGAAS GAAS STRAINED MULTI-QUANTUM-WELLS GROWN BY MBE

InGaAs/GaAs strained multi-quantum wells were prepared in our molecular beam epitaxy (MBE) system. Intensity oscillations in reflection high energy electron diffraction (RHEED) were used to determine layer thickness, indium composition, and the optimum growth temperature. By introducing a short period strained layer superlattice as the graded layer, the mismatched strain between the GaAs buffer layer and the subsequent heterostructures were buffered, and the fluctuation of indium beam flux due to the thermal disturbance was reduced. The high quality InGa/GaAs quantum wells were characterized by X-ray rocking curves, photoluminescence (PL) spectra, and transmission electron microscopy (TEM). © 1990.