X-RAY CHARACTERIZATION OF INXGA1-XAS/GAAS QUANTUM WELLS

被引：10

作者：

JEONG, J

SCHLESINGER, TE

MILNES, AG

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 87卷 / 2-3期

关键词：

D O I：

10.1016/0022-0248(88)90174-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：265 / 275

页数：11

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共 11 条

[1] OPTICAL CHARACTERIZATION OF PSEUDOMORPHIC INXGA1-XAS-GAAS SINGLE-QUANTUM-WELL HETEROSTRUCTURES
ANDERSON, NG
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[2] X-RAY DOUBLE-CRYSTAL DIFFRACTOMETRY OF GA1-XALXAS EPITAXIAL LAYERS
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[3] ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF HIGH-PURITY GAINAS ON INP
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[J]. APPLIED PHYSICS LETTERS, 1985, 46 (01) : 89 - 91
[4] THE INTERPRETATION OF X-RAY ROCKING CURVES FROM III-V SEMICONDUCTOR-DEVICE STRUCTURES
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[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (02) : 523 - 531
[5] X-RAY STUDY OF MISFIT STRAIN RELAXATION IN LATTICE-MISMATCHED HETEROJUNCTIONS
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TERAUCHI, H
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1071 - 1073
[6] SOME ASPECTS OF THE X-RAY STRUCTURAL CHARACTERIZATION OF (GA1-XALXAS)N1(GAAS)N2 GAAS(001) SUPERLATTICES
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[J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1984, 17 (JUN) : 196 - 205
[7] X-RAY DOUBLE-CRYSTAL CHARACTERIZATION OF HIGHLY PERFECT INGAAS INP GROWN BY VAPOR-PHASE EPITAXY
MACRANDER, AT
STREGE, KE
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 442 - 446
[8] GROWTH-CONDITIONS AND CHARACTERIZATION OF INGAAS GAAS STRAINED LAYERS SUPERLATTICES
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GOLDSTEIN, L
LEROUX, G
BURGEAT, J
PRIMOT, J
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 2904 - 2909
[9] X-RAY PENDELLOSUNG IN GARNET EPITAXIAL LAYERS
STACY, WT
JANSSEN, MM
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 282 - 286
[10] ATOMISTIC MODELS OF INTERFACE STRUCTURES OF GAAS-ALXGA1-XAS (X=0.2-1) QUANTUM-WELLS GROWN BY INTERRUPTED AND UNINTERRUPTED MBE
TANAKA, M
SAKAKI, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 153 - 158