FORMATION OF PATTERNED TIN OXIDE THIN-FILMS BY ION-BEAM DECOMPOSITION OF METALLOORGANICS

被引：5

作者：

CATALAN, AB

MANTESE, JV

HAMDI, AH

LAUGAL, RCO

MICHELI, AL

机构：

[1] Electrical and Electronics Engineering Department, General Motors Research Laboratories, Warren

来源：

THIN SOLID FILMS | 1990年 / 188卷 / 01期

关键词：

D O I：

10.1016/0040-6090(90)90189-K

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Boron, phosphorus and oxygen ion implantation was used to decompose tin(IV) neodecanoate selectively to form patterned tin oxide thin films on Si/SiO2 and single-crystal LiNbO3 substrates. An implantation dose of 5 × 1014 ions cm-2 at energies above 180 keV rendered the metallo-organic (MO) insoluble to xylene-N-butylacetate, permitting patterning of the MO prior to pyrolysis. Resistivities of 1-2Mω/□ were measured after pyrolysis for 0.25 μm thick patterned film. Linewidths as narrow as 330 μm were formed by this method. © 1990.

引用

页码：21 / 26

页数：6