RELAXATION OF SILICON(III) SURFACE ATOMS FROM STUDIES OF SI4H9 CLUSTERS

被引：18

作者：

REDONDO, A

GODDARD, WA

MCGILL, TC

SURRATT, GT

机构：

[1] CALTECH,ARTHUR AMOS NOYES LAB CHEM PHYS,PASADENA,CA 91125

[2] CALTECH,HARRY G STEELE LAB ELECT SCI,PASADENA,CA 91125

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 21卷 / 11期

关键词：

D O I：

10.1016/0038-1098(77)90002-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：991 / 994

页数：4

共 19 条

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