LIFETIME IN PULLED SILICON CRYSTALS

被引：10

作者：

BITTMANN, CA

BEMSKI, G

机构：

来源：

关键词：

D O I：

10.1063/1.1722671

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1423 / 1426

页数：4

共 12 条

[1]

BACKENSTOSS G, 1957, B AM PHYS SOC 2, V2, P134

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BEMSKI, G .

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[3]

BEMSKI G, 1956, OCT M EL SOC CLEV

[4]

BLAKEMORE JS, 1957, B AM PHYS SOC 2, V2, P153

[5]

DRESSELHOUSE, 1954, PHYS REV, V98, P368

[6] TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON [J].

HORNBECK, JA ;

HAYNES, JR .

PHYSICAL REVIEW, 1955, 97 (02) :311-321

[7] SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS [J].

KINGSTON, RH .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05) :829-834

[8]

KURTZ, 1956, PHYS REV, V101, P1285

[9] DRIFT MOBILITIES IN SEMICONDUCTORS .2. SILICON [J].

PRINCE, MB .

PHYSICAL REVIEW, 1954, 93 (06) :1204-1206

[10] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842