PHOTOLUMINESCENCE FROM GAAS CAF2 SI STRUCTURE GROWN BY ELECTRON-BEAM EXPOSURE (EBE) AND EPITAXY METHOD

The GaAs layers grown on CaF2/Si(111) structures by the electron-beam exposure and epitaxy (EBE-epitaxy) method were studied by photoluminescence (PL) measurements at the temperatures ranging from 10 K to 300 K for the first time. It is shown that the EBE-epitaxy was effective to improve the PL intensity of the GaAs layer grown on CaF2/Si structure, and this structure has a high potential for optical device applications. Furthermore, the stress of the GaAs layer grown on CaF2/Si substrate is expected to be reduced by the CaF2 layer compared with that of GaAs/Si structure.