IMPURITY PROFILE DETERMINATION IN EPITAXIAL GAAS CRYSTALS ON HIGH-RESISTIVITY SUBSTRATES

被引：5

作者：

YAMASHITA, A ^{[1
]}

YAMAGUCHI, M ^{[1
]}

AOKI, T ^{[1
]}

机构：

[1] MUSASHINO ELECT COMMUN LAB, MUSASHINO, TOKYO, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1973年 / 12卷 / 08期

关键词：

D O I：

10.1143/JJAP.12.1267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1267 / 1268

页数：2

共 9 条

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[2] A TECHNIQUE FOR DIRECTLY PLOTTING INVERSE DOPING PROFILE OF SEMICONDUCTOR WAFERS [J].

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[3] FREQUENCY-DEPENDENCE OF GAAS SCHOTTKY-BARRIER CAPACITANCES [J].

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STRACK, H .

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[4]

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[5] FREQUENCY DEPENDENCE OF REVERSE-BIASED CAPACITANCE OF GOLD-DOPED SILICON P+N STEP JUNCTIONS [J].

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REDDI, VGK .

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[6] CAPACITANCE OF JUNCTIONS ON GOLD-DOPED SILICON [J].

SENECHAL, RR ;

BASINSKI, J .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :3723-+

[7] MAJORITY CARRIER PROFILE IN THIN EPITAXIAL LAYERS OF GAAS FROM SCHOTTKY BARRIER (CV) CHARACTERISTICS [J].

SMITH, BL .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1970, 3 (08) :1179-&

[8] DIFFERENTIAL CAPACITANCE OF GAAS-ELECTROLYTE CONTACT [J].

YAMASHITA, A ;

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ARAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (06) :908-+

[9]

YAMASHITA A, 1972, 19 ANN M JAP SOC APP, P278

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