ATOMIC LAYER EPITAXY OF GAAS USING GACL3 AND ASH3

被引：14

作者：

JIN, Y

KOBAYASHI, R

FUJII, K

HASEGAWA, F

机构：

[1] Institute of Materials Science, University of Tsukuba, Tsukuba

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 08期

关键词：

Ale; Ash[!sub]3[!/sub; Atomic layer epitaxy; Gaas; Gacl[!sub]3[!/sub; Hydride VPE;

D O I：

10.1143/JJAP.29.L1350

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It was demonstrated that the atomic layer epitaxy (ALE) of GaAs could be performed by using GaCl3/H2and AsH3/H2. The GaCl3is a powder at room temperature and can be supplied from outside the reactor, and is essentially carbon free. The ALE growth temperature was from 200°C to 500°C. The growth temperature of 200°C is the lowest ever reported in GaAs ALE. The fact that the ALE was performed at 200°C indicates that Ga was supplied as GaCl3, suggesting the possibility of AlGaAs ALE using AlCl3, GaCl3and AsH3. © 1990 IOP Publishing Ltd.

引用

页码：L1350 / L1352

页数：3

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